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1993 | 84 | 4 | 653-656
Article title

Transformation of Native Defects in GaAs under Ultrasonic Treatment

Content
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EN
Abstracts
EN
Effect of high-intensity ultrasonic vibration on the spectrum of deep electron traps in bulk GaAs has been studied giving rise to a discussion on microscopic structure of native defects associated with the traps.
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EN
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z410kz
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