Evidence of Γ-Free or Bound-to-Deep Acceptor Character of the Y-1.2 eV Deep Photoluminescence Line in n-type Ge-doped GaAs Derived from High Hydrostatic Pressure Experiments in Diamond Anvil Cell

• Authors: J. Dmochowski , R. Stradling , A. Prins , D. Dunstan , A. Adams , H. Kukimoto
• Languages of publication: EN

Abstracts

EN

The dependence of the energy position of the deep defect-related photoluminescence line Y-1.2 eV in Ge-doped GaAs on high hydrostatic pressure is investigated using a Dunstan-like diamond anvil cell. The observation that the energy position of the line follows that of the Γ-conduction band minimum in the 1 bar-30 kbar pressure range demonstrates that the line has Γ-(free or shallow bound)-to-deep acceptor character. This fact confirms the deep-acceptor character of the deep defect, most likely a donor impurity-Ga vacancy complex, which contributes to the Y:-1.2 eV photoluminescence line.

Keywords

EN

71.55.Eq

Discipline

• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 649-652

Dates

published

1993-10

Contributors

author

J. Dmochowski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

R. Stradling

• Blackett Laboratory and Semiconductors IRC, Imperial College of Science, Technology and Medicine, Prince Consort Road, London SW7 2BZ, UK

author

A. Prins

• Physics Department, University of Surrey, Guildford, Surrey, GU2 5XH, UK

author

D. Dunstan

• Physics Department, University of Surrey, Guildford, Surrey, GU2 5XH, UK

author

A. Adams

• Physics Department, University of Surrey, Guildford, Surrey, GU2 5XH, UK

author

H. Kukimoto

• Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 227, Japan

Identifiers

DOI

10.12693/APhysPolA.84.649