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1993 | 84 | 4 | 649-652
Article title

Evidence of Γ-Free or Bound-to-Deep Acceptor Character of the Y-1.2 eV Deep Photoluminescence Line in n-type Ge-doped GaAs Derived from High Hydrostatic Pressure Experiments in Diamond Anvil Cell

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Languages of publication
EN
Abstracts
EN
The dependence of the energy position of the deep defect-related photoluminescence line Y-1.2 eV in Ge-doped GaAs on high hydrostatic pressure is investigated using a Dunstan-like diamond anvil cell. The observation that the energy position of the line follows that of the Γ-conduction band minimum in the 1 bar-30 kbar pressure range demonstrates that the line has Γ-(free or shallow bound)-to-deep acceptor character. This fact confirms the deep-acceptor character of the deep defect, most likely a donor impurity-Ga vacancy complex, which contributes to the Y:-1.2 eV photoluminescence line.
Keywords
EN
Publisher

Year
Volume
84
Issue
4
Pages
649-652
Physical description
Dates
published
1993-10
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Blackett Laboratory and Semiconductors IRC, Imperial College of Science, Technology and Medicine, Prince Consort Road, London SW7 2BZ, UK
author
  • Physics Department, University of Surrey, Guildford, Surrey, GU2 5XH, UK
author
  • Physics Department, University of Surrey, Guildford, Surrey, GU2 5XH, UK
author
  • Physics Department, University of Surrey, Guildford, Surrey, GU2 5XH, UK
author
  • Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 227, Japan
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z409kz
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