Field Ionization of Shallow Acceptors

• Authors: A. Dargys , S. Žurauskas , N. Žurauskienė
• Languages of publication: EN

Abstracts

EN

Experimental studies on hole tunneling from the substitutional boron impurity into degenerate valence band of silicon single crystals are presented. The results are interpreted within the framework of acceptor ground state quartet splitting into the Kramers doublet due to presence of random strains and electric field in the lattice.

Keywords

EN

71.70.Ej   73.20.Hb   79.70.+q  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 629-632

Dates

published

1993-10

Identifiers

DOI

10.12693/APhysPolA.84.629