Journal
Article title
Authors
Title variants
Languages of publication
Abstracts
Experimental studies on hole tunneling from the substitutional boron impurity into degenerate valence band of silicon single crystals are presented. The results are interpreted within the framework of acceptor ground state quartet splitting into the Kramers doublet due to presence of random strains and electric field in the lattice.
Discipline
Journal
Year
Volume
Issue
Pages
629-632
Physical description
Dates
published
1993-10
Contributors
author
- Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z404kz