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Number of results
1993 | 84 | 4 | 629-632
Article title

Field Ionization of Shallow Acceptors

Content
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EN
Abstracts
EN
Experimental studies on hole tunneling from the substitutional boron impurity into degenerate valence band of silicon single crystals are presented. The results are interpreted within the framework of acceptor ground state quartet splitting into the Kramers doublet due to presence of random strains and electric field in the lattice.
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EN
Contributors
author
  • Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
  • Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z404kz
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