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1993 | 84 | 4 | 629-632
Article title

Field Ionization of Shallow Acceptors

Content
Title variants
Languages of publication
EN
Abstracts
EN
Experimental studies on hole tunneling from the substitutional boron impurity into degenerate valence band of silicon single crystals are presented. The results are interpreted within the framework of acceptor ground state quartet splitting into the Kramers doublet due to presence of random strains and electric field in the lattice.
Keywords
EN
Year
Volume
84
Issue
4
Pages
629-632
Physical description
Dates
published
1993-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z404kz
Identifiers
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