Hydrostatic Pressure Studies of Asymmetric Double-Barrier Resonant Tunneling Diodes

• Authors: R. Diniz , J. Smoliner , E. Gornik , T. Suski , U. Meiners , H. Brugger
• Languages of publication: EN

Abstracts

EN

Tunneling processes in double-barrier GaAs/AlAs diodes with an incorporated AlGaAs pre-barrier were studied under hydrostatic pressure. The electrical characteristics resulting from a pre-barrier on the side of the emitter can be explained at 1 bar, solely by the Γ-profile: increasing pressure shows that the pre-barrier does not reduce the Γ-X tunneling. A pre-barrier on the collector side leads to charge buildup at the X minimum within the AlAs collector barrier.

Keywords

EN

72.80.Ey; 73.40.Gk

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)

• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 625-628

Dates

published

1993-10

Contributors

author

R. Diniz

• Walter Schottky Institut, TU München, 8046 Garching, Am Coulombwall, Germany

author

J. Smoliner

• Walter Schottky Institut, TU München, 8046 Garching, Am Coulombwall, Germany

author

E. Gornik

• Walter Schottky Institut, TU München, 8046 Garching, Am Coulombwall, Germany

author

T. Suski

• UNIPRESS, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

U. Meiners

• Daimler-Benz Research Centre, 7900 Ulm, PO Box 2360, Germany

author

H. Brugger

• Daimler-Benz Research Centre, 7900 Ulm, PO Box 2360, Germany

Identifiers

DOI

10.12693/APhysPolA.84.625