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1993 | 84 | 4 | 625-628
Article title

Hydrostatic Pressure Studies of Asymmetric Double-Barrier Resonant Tunneling Diodes

Content
Title variants
Languages of publication
EN
Abstracts
EN
Tunneling processes in double-barrier GaAs/AlAs diodes with an incorporated AlGaAs pre-barrier were studied under hydrostatic pressure. The electrical characteristics resulting from a pre-barrier on the side of the emitter can be explained at 1 bar, solely by the Γ-profile: increasing pressure shows that the pre-barrier does not reduce the Γ-X tunneling. A pre-barrier on the collector side leads to charge buildup at the X minimum within the AlAs collector barrier.
Keywords
EN
Publisher

Year
Volume
84
Issue
4
Pages
625-628
Physical description
Dates
published
1993-10
Contributors
author
  • Walter Schottky Institut, TU München, 8046 Garching, Am Coulombwall, Germany
author
  • Walter Schottky Institut, TU München, 8046 Garching, Am Coulombwall, Germany
author
  • Walter Schottky Institut, TU München, 8046 Garching, Am Coulombwall, Germany
author
  • UNIPRESS, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • Daimler-Benz Research Centre, 7900 Ulm, PO Box 2360, Germany
author
  • Daimler-Benz Research Centre, 7900 Ulm, PO Box 2360, Germany
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z403kz
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