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1993 | 84 | 4 | 625-628
Article title

Hydrostatic Pressure Studies of Asymmetric Double-Barrier Resonant Tunneling Diodes

Content
Title variants
Languages of publication
EN
Abstracts
EN
Tunneling processes in double-barrier GaAs/AlAs diodes with an incorporated AlGaAs pre-barrier were studied under hydrostatic pressure. The electrical characteristics resulting from a pre-barrier on the side of the emitter can be explained at 1 bar, solely by the Γ-profile: increasing pressure shows that the pre-barrier does not reduce the Γ-X tunneling. A pre-barrier on the collector side leads to charge buildup at the X minimum within the AlAs collector barrier.
Keywords
EN
Year
Volume
84
Issue
4
Pages
625-628
Physical description
Dates
published
1993-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z403kz
Identifiers
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