Thermally Induced Intermixing of InGaAs/GaAs Single Quantum Wells

• Authors: A. Kozanecki , W. Gillin , B. Sealy
• Languages of publication: EN

Abstracts

EN

In this work interdiffusion and strain relaxation in In_{0.2}Ga_{0.8}As/GaAs single quantum wells subjected to rapid thermal annealing have been studied using photoluminescence and Rutherford backscattering of 1.5 MeV He^{+} ions. It has been found that the diffusion coefficient of In atoms in GaAs, evaluated from the photoluminescence spectra for the assumed Gaussian well shapes, agrees within 30% with that obtained using Rutherford backscattering. Channeling angular scans, through the ⟨110⟩ axial direction of the heterostructures indicate that strain relaxation in the intermixed wells is exclusively due to compositional shallowing of the wells.

Keywords

EN

61.80.Mk; 78.65.Fa

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 621-624

Dates

published

1993-10

Contributors

author

A. Kozanecki

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

W. Gillin

• Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU1 5XH, UK

author

B. Sealy

• Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU1 5XH, UK

Identifiers

DOI

10.12693/APhysPolA.84.621