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1993 | 84 | 4 | 621-624
Article title

Thermally Induced Intermixing of InGaAs/GaAs Single Quantum Wells

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EN
Abstracts
EN
In this work interdiffusion and strain relaxation in In_{0.2}Ga_{0.8}As/GaAs single quantum wells subjected to rapid thermal annealing have been studied using photoluminescence and Rutherford backscattering of 1.5 MeV He^{+} ions. It has been found that the diffusion coefficient of In atoms in GaAs, evaluated from the photoluminescence spectra for the assumed Gaussian well shapes, agrees within 30% with that obtained using Rutherford backscattering. Channeling angular scans, through the ⟨110⟩ axial direction of the heterostructures indicate that strain relaxation in the intermixed wells is exclusively due to compositional shallowing of the wells.
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EN
Publisher

Year
Volume
84
Issue
4
Pages
621-624
Physical description
Dates
published
1993-10
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU1 5XH, UK
author
  • Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU1 5XH, UK
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z402kz
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