Impurity Wave Function and Alloy Broadening of Impurity-Related Luminescence
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By performing state-of-art computations of the acceptor wave functions in GaAs we show that the linewidth of the conduction band to acceptor luminescence increases more than quadratically with the increase in the binding energy. This proves that study of the fluctuation broadening of the impurity-related emission in semiconductor alloys may provide a critical test for theories claiming realistic impurity wave function computation. The theoretical results are compared with the experimental data for high purity p-type AlGaAs alloys.
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