Title variants
Languages of publication
Abstracts
By performing state-of-art computations of the acceptor wave functions in GaAs we show that the linewidth of the conduction band to acceptor luminescence increases more than quadratically with the increase in the binding energy. This proves that study of the fluctuation broadening of the impurity-related emission in semiconductor alloys may provide a critical test for theories claiming realistic impurity wave function computation. The theoretical results are compared with the experimental data for high purity p-type AlGaAs alloys.
Discipline
Journal
Year
Volume
Issue
Pages
591-594
Physical description
Dates
published
1993-09
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z330kz