Impurity Wave Function and Alloy Broadening of Impurity-Related Luminescence

• Authors: R. Buczko , J. Langer
• Languages of publication: EN

Abstracts

EN

By performing state-of-art computations of the acceptor wave functions in GaAs we show that the linewidth of the conduction band to acceptor luminescence increases more than quadratically with the increase in the binding energy. This proves that study of the fluctuation broadening of the impurity-related emission in semiconductor alloys may provide a critical test for theories claiming realistic impurity wave function computation. The theoretical results are compared with the experimental data for high purity p-type AlGaAs alloys.

Keywords

EN

71.35.+z; 73.40.Kp; 78.55.-m

Discipline

• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 3
• Pages: 591-594

Dates

published

1993-09

Contributors

author

R. Buczko

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Langer

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.591