Antisites Defects in GaP

• Authors: J. Jasiński , M. Kamińska , M. Palczewska , P. Jurkiewicz-Wagner
• Languages of publication: EN

Abstracts

EN

ESR, optical, and transport measurements were done on neutron-irradiated GaP crystals subjected to thermal annealing. The behavior of two dominant paramagnetic defects: phosphorus antisite PP4 and WA1 [1] was followed. ESR signal similar to WA1 was earlier attributed to the defect related with gallium antisite [2]. Our thermal annealing experiments supported such attribution. Apart from that, the obtained results indicated that two dominant absorption bands in neutron-irradiated GaP with maxima at 0.79 and 1.13 eV [1] were not connected with PP_{4} or WA1 defects. However, one of these paramagnetic defects (or two of them) were responsible for hopping transport in n-irradiated GaP crystals.

Keywords

EN

71.55.Eq; 78.50.Ge; 76.30.Mi

Discipline

• 71.55.Eq: III-V semiconductors
• 76.30.Mi: Color centers and other defects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 3
• Pages: 579-582

Dates

published

1993-09

Contributors

author

J. Jasiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Kamińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Palczewska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

P. Jurkiewicz-Wagner

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.579