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1993 | 84 | 3 | 579-582
Article title

Antisites Defects in GaP

Content
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Languages of publication
EN
Abstracts
EN
ESR, optical, and transport measurements were done on neutron-irradiated GaP crystals subjected to thermal annealing. The behavior of two dominant paramagnetic defects: phosphorus antisite PP4 and WA1 [1] was followed. ESR signal similar to WA1 was earlier attributed to the defect related with gallium antisite [2]. Our thermal annealing experiments supported such attribution. Apart from that, the obtained results indicated that two dominant absorption bands in neutron-irradiated GaP with maxima at 0.79 and 1.13 eV [1] were not connected with PP_{4} or WA1 defects. However, one of these paramagnetic defects (or two of them) were responsible for hopping transport in n-irradiated GaP crystals.
Keywords
EN
Year
Volume
84
Issue
3
Pages
579-582
Physical description
Dates
published
1993-09
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z327kz
Identifiers
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