Bistable Behaviour of the New Shallow Thermal Donor in Aluminum Doped Silicon

• Authors: P. Kaczor , M. Godlewski , T. Gregorkiewicz
• Languages of publication: EN

Abstracts

EN

In the present study a new bistable shallow thermal donor in aluminum doped silicon was investigated by means of the Fourier transform infrared spectroscopy. The temperature dependence of the photo-conversion into the metastable state was established and some Hints for the origin of the metastability were given.

Keywords

EN

71.55.Ht; 78.50.Ge

Discipline

• 71.55.Ht: Other nonmetals

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 3
• Pages: 555-558

Dates

published

1993-09

Contributors

author

P. Kaczor

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Gregorkiewicz

• Van der Waals-Zeeman Laboratorium, University of Amsterdam, Vackelnierstraat 65, 1018 XE Amsterdam, The Netherlands

Identifiers

DOI

10.12693/APhysPolA.84.555