PL EN


Preferences help
enabled [disable] Abstract
Number of results
1993 | 84 | 3 | 555-558
Article title

Bistable Behaviour of the New Shallow Thermal Donor in Aluminum Doped Silicon

Content
Title variants
Languages of publication
EN
Abstracts
EN
In the present study a new bistable shallow thermal donor in aluminum doped silicon was investigated by means of the Fourier transform infrared spectroscopy. The temperature dependence of the photo-conversion into the metastable state was established and some Hints for the origin of the metastability were given.
Keywords
EN
Publisher

Year
Volume
84
Issue
3
Pages
555-558
Physical description
Dates
published
1993-09
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Van der Waals-Zeeman Laboratorium, University of Amsterdam, Vackelnierstraat 65, 1018 XE Amsterdam, The Netherlands
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z321kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.