Interaction between Thin Films of Zinc and (100) GaAs

• Authors: E. Kamińska , A. Piotrowska , R. Żarecka , E. Mizera
• Languages of publication: EN

Abstracts

EN

Interfacial reactions between thin films of Zn and GaAs were studied by means of transmission electron microscopy. Low-temperature interaction is governed by the penetration of Zn into the native oxide layer at the metal/GaAs interface. At 360°C the formation of Zn_{3}As_{2} phase, highly oriented with respect to the (100) substrate takes place.

Keywords

EN

73.40.Ns

Discipline

• 73.40.Ns: Metal-nonmetal contacts

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 3
• Pages: 527-529

Dates

published

1993-09

Contributors

author

E. Kamińska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Piotrowska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

R. Żarecka

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

E. Mizera

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.527