PL EN


Preferences help
enabled [disable] Abstract
Number of results
1993 | 84 | 3 | 475-489
Article title

High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices

Content
Title variants
Languages of publication
EN
Abstracts
EN
Double crystal and triple axis X-ray diffractometry was used to characterize the structural properties of Si/Si_{1-x}Ge_{x} multiquantum well samples grown pseudomorphically on Si(001) substrates, as well as of short-period Si_{9}Ge_{6} superlattices grown by molecular beam epitaxy on rather thick step-graded Si_{1-x}Ge_{x} (0 < x < 0.4, 650 nm thick) buffers followed by 550 nm Si_{0.6} Ge_{0.4} layers. Reciprocal space maps around the (004) and (224) reciprocal lattice points yield direct information on the strain status of the layers in the heterostructure systems and in particular on the amount of strain relaxation.
Keywords
EN
Publisher

Year
Volume
84
Issue
3
Pages
475-489
Physical description
Dates
published
1993-09
Contributors
author
  • Institut für Halbleiterphysik, Johannes Kepler Universität Linz, 4040 Linz, Austria
  • Institut für Halbleiterphysik, Johannes Kepler Universität Linz, 4040 Linz, Austria
author
  • Institut für Halbleiterphysik, Johannes Kepler Universität Linz, 4040 Linz, Austria
author
  • Walter Schottky Institut, TU München, D-8046 Garching, Germany
author
  • Walter Schottky Institut, TU München, D-8046 Garching, Germany
author
  • Daimler Benz AG, Forschungszentrum, Wilhelm Runge Straße 11, D-7900 Ulm, Germany
author
  • Daimler Benz AG, Forschungszentrum, Wilhelm Runge Straße 11, D-7900 Ulm, Germany
author
  • Daimler Benz AG, Forschungszentrum, Wilhelm Runge Straße 11, D-7900 Ulm, Germany
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z308kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.