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1993 | 84 | 3 | 409-417
Article title

Optically-Determined Exciton Transport in GaAs Structures

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EN
Abstracts
EN
We have used an all-optical photoluminescence-imaging technique to measure excitonic transport in three types of GaAs structures in which the excitonic transitions vary from allowed direct-gap excitons to forbidden, doubly-indirect Type-II excitons. We f nd remarkable differences in the transport properties of these excitons. Our studies show that bulk free-exciton transport exhibits an anomalous laser power-dependent diffusivity, whereas quasi-2D interfacial excitons and Type-II cross-interface excitons do not. Additionally, we observe localization of cross-interface excitons at the potential disorder induced by the heterointerface roughness.
Keywords
EN
Publisher

Year
Volume
84
Issue
3
Pages
409-417
Physical description
Dates
published
1993-09
Contributors
author
  • Emory University, Physics Dept., Atlanta, GA 30322, USA
author
  • IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, USA
author
  • Sandia National Laboratories, Albuquerque, NM 87185, USA
author
  • IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, USA
author
  • Sandia National Laboratories, Albuquerque, NM 87185, USA
author
  • IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, USA
author
  • IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, USA
author
  • IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, USA
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z302kz
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