Optically-Determined Exciton Transport in GaAs Structures

• Authors: G. Gililand , D. Wolford , H. Hjalmarson , M. Petrovic , J. Klem , T. Kuech , G. Northrop , J. Bradley
• Languages of publication: EN

Abstracts

EN

We have used an all-optical photoluminescence-imaging technique to measure excitonic transport in three types of GaAs structures in which the excitonic transitions vary from allowed direct-gap excitons to forbidden, doubly-indirect Type-II excitons. We f nd remarkable differences in the transport properties of these excitons. Our studies show that bulk free-exciton transport exhibits an anomalous laser power-dependent diffusivity, whereas quasi-2D interfacial excitons and Type-II cross-interface excitons do not. Additionally, we observe localization of cross-interface excitons at the potential disorder induced by the heterointerface roughness.

Keywords

EN

78.47.+p; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 3
• Pages: 409-417

Dates

published

1993-09

Contributors

author

G. Gililand

• Emory University, Physics Dept., Atlanta, GA 30322, USA

author

D. Wolford

• IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, USA

author

H. Hjalmarson

• Sandia National Laboratories, Albuquerque, NM 87185, USA

author

M. Petrovic

• IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, USA

author

J. Klem

• Sandia National Laboratories, Albuquerque, NM 87185, USA

author

T. Kuech

• IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, USA

author

G. Northrop

• IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, USA

author

J. Bradley

• IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, USA

Identifiers

DOI

10.12693/APhysPolA.84.409