PL EN


Preferences help
enabled [disable] Abstract
Number of results
1993 | 83 | 5 | 587-596
Article title

Monte Carlo Simulation of Partially Ordered Atomic Layers Adsorbed on the Monocristalline Surfaces

Content
Title variants
Languages of publication
EN
Abstracts
EN
The calculations of the correlations functions and structure factors are performed by means of the Monte Carlo simulation. The results for O/Ni(001) system are presented and compared with those obtained using self-consistent molecular field approximation and cumulant expansion method. The simulation for more complex system CO/Pt(111) is also performed. The calculations of the topological correlations allow us to find the coverage dependence of the incoherent scattering amplitude which can be experimentally detected.
Keywords
EN
Publisher

Year
Volume
83
Issue
5
Pages
587-596
Physical description
Dates
published
1993-05
Contributors
author
  • Department of Solid State Physics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
author
  • Laboratoire de Tribologie et de Dynamique des Systèmes, CNRS URA 855, Ecole Nationale d'Ingénieurs de St Etienne, 58 rue Jean Parot, 42023 St Etienne, France CNRS URA 855, Ecole Centrale de Lyon, 69131 Ecully, France
author
  • Laboratoire de Tribologie et de Dynamique des Systèmes, CNRS URA 855, Ecole Nationale d'Ingénieurs de St Etienne, 58 rue Jean Parot, 42023 St Etienne, France CNRS URA 855, Ecole Centrale de Lyon, 69131 Ecully, France
author
  • Laboratoire de Tribologie et de Dynamique des Systèmes, CNRS URA 855, Ecole Nationale d'Ingénieurs de St Etienne, 58 rue Jean Parot, 42023 St Etienne, France CNRS URA 855, Ecole Centrale de Lyon, 69131 Ecully, France
author
  • Department of Solid State Physics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv83z505kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.