Investigation of Effect of Annealing the Fe_{78}Si_{9}B_{13} Amorphous Alloy Using the EELS Method and the Hall Effect

• Authors: H. Kołodziej , E. Jakubczyk , Z. Mandecki , B. Całusiński
• Languages of publication: EN

Abstracts

EN

The effect of structural relaxation on the electronic structure of Fe_{78}Si_{9}B_{13} metallic glass was investigated by means of the Hall effect, electrical conductivity and EELS methods. The effect of the structural relaxations was observed by four-hour annealing of the samples in argon atmosphere at temperatures 573, 673, 723, 773 K. The most distinct changes in the measured quantities were observed for samples annealed at 773 K. The differences in EELS spectrum, a decrease in the electrical and the Hall resistance are specific to these samples. X-ray diffractometry confirmed that the samples annealed at this temperature show recrystallization.

Keywords

EN

61.43.Dq

Discipline

• 61.43.Dq: Amorphous semiconductors, metals, and alloys

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 83
• Issue: 3
• Pages: 327-331

Dates

published

1993-03

Contributors

author

H. Kołodziej

• Institute of Physics, Pedagogical University, Al. Armii Krajowej 13/15, 42-201 Częstochowa, Poland

author

E. Jakubczyk

• Institute of Physics, Pedagogical University, Al. Armii Krajowej 13/15, 42-201 Częstochowa, Poland

author

Z. Mandecki

• Institute of Physics, Pedagogical University, Al. Armii Krajowej 13/15, 42-201 Częstochowa, Poland

author

B. Całusiński

• Institute of Physics, Pedagogical University, Al. Armii Krajowej 13/15, 42-201 Częstochowa, Poland

Identifiers

DOI

10.12693/APhysPolA.83.327