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1993 | 83 | 1 | 87-93
Article title

Changes of GaP: N Defect Structure under Hydrostatic Pressure

Content
Title variants
Languages of publication
EN
Abstracts
EN
The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c_{N}, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c_{N} > 10^{20} at. cm^{-3}. The model explaining the hydrostatic pressure induced defect structure changes is proposed.
Keywords
EN
Year
Volume
83
Issue
1
Pages
87-93
Physical description
Dates
published
1993-01
received
1992-09-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv83z109kz
Identifiers
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