Changes of GaP: N Defect Structure under Hydrostatic Pressure

• Authors: J. Bąk-Misiuk , J. Domagała , B. Kozankiewicz , A. Misiuk , J. Adamczewska , M. Skibska
• Languages of publication: EN

Abstracts

EN

The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c_{N}, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c_{N} > 10^{20} at. cm^{-3}. The model explaining the hydrostatic pressure induced defect structure changes is proposed.

Keywords

EN

65.70.+y

• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 83
• Issue: 1
• Pages: 87-93

Dates

published

1993-01

received

1992-09-10

Contributors

author

J. Bąk-Misiuk

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Domagała

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

B. Kozankiewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Misiuk

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Adamczewska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Skibska

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.83.87