Temperature Dependent Electron Beam Induced Current Study of Defects in Silicon

• Authors: T. Sekiguchi , S. Kusanagi , Y. Miyamura , K. Sumino
• Languages of publication: EN

Abstracts

EN

A new computer-aided electron beam induced current system was developed which makes it possible to obtain two-dimensional mapping of the absolute magnitudes of electron beam induced current signals over the temperature range 15 K-400 K. Electronic states of defects in cast silicon and deformation-induced dislocations in float-zone silicon were investigated from the analyses of temperature dependencies of electron beam induced current contrasts of the defects measured with the system. Electron beam induced current active defects in cast Si were identified to be Fe impurity atoms or Fe-B pairs incorporated at the dislocation core depending on the cooling rate of a crystal. Dislocations in float-zone silicon were shown to have an energy level for carrier recombination in the lower half of the band gap.

Keywords

EN

71.55.Fr; 72.80.Cw

Discipline

• 72.80.Cw: Elemental semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 83
• Issue: 1
• Pages: 71-79

Dates

published

1993-01

received

1992-11-23

Contributors

author

T. Sekiguchi

• Institute for Materials Research, Tohoku University, Sendai 980, Japan

author

S. Kusanagi

• Institute for Materials Research, Tohoku University, Sendai 980, Japan

author

Y. Miyamura

• Institute for Materials Research, Tohoku University, Sendai 980, Japan

author

K. Sumino

• Institute for Materials Research, Tohoku University, Sendai 980, Japan

Identifiers

DOI

10.12693/APhysPolA.83.71