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1993 | 83 | 1 | 59-70
Article title

Implantation of Rare-Earth Atoms into Si and III-V Compounds

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Abstracts
EN
Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.
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Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • University of Manchester Institute of Science and Technology, P.O. Box 88, Sackville Str., Manchester, M60 1QD, United Kingdom
References
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Publication order reference
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bwmeta1.element.bwnjournal-article-appv83z106kz
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