Implantation of Rare-Earth Atoms into Si and III-V Compounds

• Authors: A. Kozanecki , J. Langer , A. Peaker
• Languages of publication: EN

Abstracts

EN

Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.

Keywords

EN

61.80.Jh; 78.55.-m

Discipline

• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)

• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 83
• Issue: 1
• Pages: 59-70

Dates

published

1993-01

received

1992-11-20

Contributors

author

A. Kozanecki

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Langer

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Peaker

• University of Manchester Institute of Science and Technology, P.O. Box 88, Sackville Str., Manchester, M60 1QD, United Kingdom

Identifiers

DOI

10.12693/APhysPolA.83.59