Journal
Article title
Authors
Title variants
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Abstracts
Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.
Discipline
Journal
Year
Volume
Issue
Pages
59-70
Physical description
Dates
published
1993-01
received
1992-11-20
Contributors
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
- University of Manchester Institute of Science and Technology, P.O. Box 88, Sackville Str., Manchester, M60 1QD, United Kingdom
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv83z106kz