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1993 | 83 | 1 | 59-70
Article title

Implantation of Rare-Earth Atoms into Si and III-V Compounds

Content
Title variants
Languages of publication
EN
Abstracts
EN
Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.
Keywords
EN
Year
Volume
83
Issue
1
Pages
59-70
Physical description
Dates
published
1993-01
received
1992-11-20
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv83z106kz
Identifiers
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