Implantation of Rare-Earth Atoms into Si and III-V Compounds

A. Kozanecki; J. Langer; A. Peaker

doi:10.12693/APhysPolA.83.59

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Acta Physica Polonica A

1993 | 83 | 1 | 59-70

Article title

Implantation of Rare-Earth Atoms into Si and III-V Compounds

Authors

A. Kozanecki , J. Langer , A. Peaker

Content

http://przyrbwn.icm.edu.pl/APP/PDF/83/a083z1p06.pdf [remote]

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Abstracts

Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.

Keywords

61.80.Jh 78.55.-m

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

1993

Volume

Issue

Pages

59-70

Physical description

Dates

published

1993-01

received

1992-11-20

References

Document Type

Publication order reference

YADDA identifier

bwmeta1.element.bwnjournal-article-appv83z106kz

Identifiers

DOI

10.12693/APhysPolA.83.59