Acoustoelectrical Relaxation in GaAs by the Formation and the Recovery of Metastable EL2

• Authors: J. Ertel , H. Brion , P. Haasen
• Languages of publication: EN

Abstracts

EN

The transformations between the normal and metastable state of EL2 in GaAs are investigated. We apply the internal friction technique as a probe for very small conductivities and discuss the changes in conductivity by the formation and recovery of EL2*. At 40 K both shallow acceptors and EL2 are photoquenched into neutral metastable states. The acceptors are likely to be associated with EL2* forming an electrically inactive state. We identify two damping peaks at 60 and 95 K with the regeneration of the acceptors and EL2 respectively. The latter indicates a regeneration via the charged defect (EL2)^{+}.

Keywords

EN

62.40.+i; 77.40.+i; 72.80.Ey; 71.55.Eq

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 71.55.Eq: III-V semiconductors
• 62.40.+i: Anelasticity, internal friction, stress relaxation, and mechanical resonances(for materials treatment effects on anelasticity, see 81.40.Jj in materials science)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 83
• Issue: 1
• Pages: 11-23

Dates

published

1993-01

received

1992-08-24

Contributors

author

J. Ertel

• Institut für Metallphysik, Universität Göttingen, Hospitalstr. 3-7, W-3400, Göttingen, Germany

author

H. Brion

• Institut für Metallphysik, Universität Göttingen, Hospitalstr. 3-7, W-3400, Göttingen, Germany

author

P. Haasen

• Institut für Metallphysik, Universität Göttingen, Hospitalstr. 3-7, W-3400, Göttingen, Germany

Identifiers

DOI

10.12693/APhysPolA.83.11