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1993 | 83 | 1 | 11-23
Article title

Acoustoelectrical Relaxation in GaAs by the Formation and the Recovery of Metastable EL2

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EN
Abstracts
EN
The transformations between the normal and metastable state of EL2 in GaAs are investigated. We apply the internal friction technique as a probe for very small conductivities and discuss the changes in conductivity by the formation and recovery of EL2*. At 40 K both shallow acceptors and EL2 are photoquenched into neutral metastable states. The acceptors are likely to be associated with EL2* forming an electrically inactive state. We identify two damping peaks at 60 and 95 K with the regeneration of the acceptors and EL2 respectively. The latter indicates a regeneration via the charged defect (EL2)^{+}.
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Contributors
author
  • Institut für Metallphysik, Universität Göttingen, Hospitalstr. 3-7, W-3400, Göttingen, Germany
author
  • Institut für Metallphysik, Universität Göttingen, Hospitalstr. 3-7, W-3400, Göttingen, Germany
author
  • Institut für Metallphysik, Universität Göttingen, Hospitalstr. 3-7, W-3400, Göttingen, Germany
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv83z102kz
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