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1992 | 82 | 5 | 914-918
Article title

Visible Light Emission from Porous Silicon

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EN
Abstracts
EN
The aim of this paper is the study of porous Si prepared by preferential anodic dissolution in concentrated HF acid solutions. Porous silicon layers exhibited extremely efficient luminescence in the 700-900 nm range at room temperature. Basic characteristics of this luminescence strongly suggest the intrinsic origin of the process, directly related to quantum confinement. The additional transmission-electron-microscopy and electron-diffraction studies - were performed to support hypothesis that luminescence originates from silicon nanostructures.
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EN
Publisher

Year
Volume
82
Issue
5
Pages
914-918
Physical description
Dates
published
1992-11
Contributors
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z551kz
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