Electrical Properties of an Acceptor-like State of Metastable EL2 in n-type GaAs under Uniaxial Stress

• Authors: A. Babiński , A. Wysmołek
• Languages of publication: EN

Abstracts

EN

The electrical resistivity and deep level transient spectroscopy measurements of n-type GaAs under uniaxial stress for [100] and [111] directions at low temperatures are presented. After the transformation of EL2 to its metastable state the stress induced strong anisotropy in the increase in resistivity was observed. The observed splitting of the acceptor-like state of metastable EL2 implies the trigonal symmetry of that defect.

Keywords

EN

71.55.Eq; 72.20.Fr; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 71.55.Eq: III-V semiconductors
• 72.20.Fr: Low-field transport and mobility; piezoresistance

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 908-910

Dates

published

1992-11

Contributors

author

A. Babiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

A. Wysmołek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.82.908