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Languages of publication
Abstracts
The electrical resistivity and deep level transient spectroscopy measurements of n-type GaAs under uniaxial stress for [100] and [111] directions at low temperatures are presented. After the transformation of EL2 to its metastable state the stress induced strong anisotropy in the increase in resistivity was observed. The observed splitting of the acceptor-like state of metastable EL2 implies the trigonal symmetry of that defect.
Discipline
Journal
Year
Volume
Issue
Pages
908-910
Physical description
Dates
published
1992-11
Contributors
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z549kz