Formation of the DX State by Donors in Al_{x}Ga_{1-x}As - Experiment

• Authors: L. Dobaczewski , P. Kaczor , M. Missous , Z. Żytkiewicz , D. Dobosz , A. Peaker
• Languages of publication: EN

Abstracts

EN

A high-resolution Laplace-transform deep level transient spectroscopy was used to study electron emission from the DX centres related to group IV and VI donor elements in AlGaAs. This provides the experimental evidence that substitutional-interstitial atom motion is responsible for DX behaviour and for the associated metastability effects.

Keywords

EN

71.38.+i; 71.55.Eq; 78.50.Ge

Discipline

• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 905-907

Dates

published

1992-11

Contributors

author

L. Dobaczewski

• Centre for Electronic Materials, UMIST, Manchester M60 1QD, P.O. Box 88, Great Britain
• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 00-668 Warszawa, Poland

author

P. Kaczor

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 00-668 Warszawa, Poland

author

M. Missous

• Centre for Electronic Materials, UMIST, Manchester M60 1QD, P.O. Box 88, Great Britain

author

Z. Żytkiewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 00-668 Warszawa, Poland

author

D. Dobosz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 00-668 Warszawa, Poland

author

A. Peaker

• Centre for Electronic Materials, UMIST, Manchester M60 1QD, P.O. Box 88, Great Britain

Identifiers

DOI

10.12693/APhysPolA.82.905