Heterogeneous Amorphization of P and As Implanted GaAs at Low Temperatures

• Authors: J. Krynicki , H. Rzewuski , A. Turos
• Languages of publication: EN

Abstracts

EN

Amorphization of P and As implanted GaAs at liquid nitrogen temperature has been investigated. The post-implantation damage was measured by means of Rutherford Backscattering (RBS) He^{+} channeling technique. The critical dose and critical energy densities for amorphization were determined. From the results obtained it is concluded that for both ions the amorphization process can be satisfactorily described by the heterogeneous model.

Keywords

EN

61.80.Jh; 61.70.Tm

Discipline

• 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 871-875

Dates

published

1992-11

Contributors

author

J. Krynicki

• Institute of Nuclear Chemistry and Technology, Dorodna 16, 03-195 Warszawa, Poland

author

H. Rzewuski

• Institute of Nuclear Chemistry and Technology, Dorodna 16, 03-195 Warszawa, Poland

author

A. Turos

• Institute of Nuclear Studies, Hoża 69, 00-681 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.82.871