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1992 | 82 | 5 | 871-875
Article title

Heterogeneous Amorphization of P and As Implanted GaAs at Low Temperatures

Content
Title variants
Languages of publication
EN
Abstracts
EN
Amorphization of P and As implanted GaAs at liquid nitrogen temperature has been investigated. The post-implantation damage was measured by means of Rutherford Backscattering (RBS) He^{+} channeling technique. The critical dose and critical energy densities for amorphization were determined. From the results obtained it is concluded that for both ions the amorphization process can be satisfactorily described by the heterogeneous model.
Keywords
EN
Year
Volume
82
Issue
5
Pages
871-875
Physical description
Dates
published
1992-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z538kz
Identifiers
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