Journal
Article title
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Abstracts
The mechanism of carrier heating in ZnS-based electroluminescence devices is discussed. We show that carrier acceleration by an applied electric field is at 300 K not a loss-free (ballistic carriers) process. Even for large carrier energies (about 2.5 eV) inelastic scattering on polar optical phonons dominates over elastic scattering on acoustic phonons and ionized impurities.
Discipline
Journal
Year
Volume
Issue
Pages
865-867
Physical description
Dates
published
1992-11
Contributors
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z536kz