Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs

• Authors: A. Piotrowska , E. Kamińska , M. Guziewicz , J. Adamczewska , S. Kwiatkowski , A. Turos
• Languages of publication: EN

Abstracts

EN

Reactively sputtered TiN films were evaluated as annealing cap improving the formation of Au(Zn) ohmic contact and as antidiffusion barrier protecting contact metallization and underlying GaAs against reaction with Au overlayers.

Keywords

EN

73.40.Ns

Discipline

• 73.40.Ns: Metal-nonmetal contacts

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 857-860

Dates

published

1992-11

Contributors

author

A. Piotrowska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

E. Kamińska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Guziewicz

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Adamczewska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

S. Kwiatkowski

• Institute of Nuclear Studies, Hoża 69, 00-682 Warszawa, Poland

author

A. Turos

• Institute of Nuclear Studies, Hoża 69, 00-682 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.82.857