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1992 | 82 | 5 | 857-860
Article title

Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
Reactively sputtered TiN films were evaluated as annealing cap improving the formation of Au(Zn) ohmic contact and as antidiffusion barrier protecting contact metallization and underlying GaAs against reaction with Au overlayers.
Keywords
EN
Publisher

Year
Volume
82
Issue
5
Pages
857-860
Physical description
Dates
published
1992-11
Contributors
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Nuclear Studies, Hoża 69, 00-682 Warszawa, Poland
author
  • Institute of Nuclear Studies, Hoża 69, 00-682 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z534kz
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