Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs

• Authors: A. Babiński , J. Przybytek , M. Baj , P. Omling , L. Samuelson , T. Słupiński
• Languages of publication: EN

Abstracts

EN

We present some preliminary results of the first hydrostatic-pressure study of the electronic level related to the Sb-heteroantisite defect in GaAs. We studied two kinds of n-type GaAs samples doped with antimony: bulk samples grown by liquid encapsulated Czochralski method and thin layers grown by metalorganic chemical vapour deposition technique. We found strongly nonlinear pressure dependence of the activation energy of the emission rate for the level. Moreover, the results obtained for the bulk material were fairly different from those obtained for thin metalorganic chemical vapour deposition layers. The possible explanation of this difference is presented.

Keywords

EN

71.55.Eq; 62.50.-p

Discipline

• 71.55.Eq: III-V semiconductors
• 62.50.-p: High-pressure effects in solids and liquids(for high pressure apparatus and techniques, see 07.35.+k; for high-pressure behavior of rocks and minerals, see 91.60.Gf; for pressure treatments, see 81.40.Vw in materials science; for effects of pressure on superconducting transition temperature, see 74.62.Fj)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 841-844

Dates

published

1992-11

Contributors

author

A. Babiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

J. Przybytek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Baj

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

P. Omling

• Department of Solid State Physics, University of Lund, Box 118, 221 00 Lund, Sweden

author

L. Samuelson

• Department of Solid State Physics, University of Lund, Box 118, 221 00 Lund, Sweden

author

T. Słupiński

• Laboratory of Crystal Growth Physics, Przyokopowa 28, 01-208 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.82.841