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1992 | 82 | 5 | 841-844
Article title

Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs

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EN
Abstracts
EN
We present some preliminary results of the first hydrostatic-pressure study of the electronic level related to the Sb-heteroantisite defect in GaAs. We studied two kinds of n-type GaAs samples doped with antimony: bulk samples grown by liquid encapsulated Czochralski method and thin layers grown by metalorganic chemical vapour deposition technique. We found strongly nonlinear pressure dependence of the activation energy of the emission rate for the level. Moreover, the results obtained for the bulk material were fairly different from those obtained for thin metalorganic chemical vapour deposition layers. The possible explanation of this difference is presented.
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Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Department of Solid State Physics, University of Lund, Box 118, 221 00 Lund, Sweden
author
  • Department of Solid State Physics, University of Lund, Box 118, 221 00 Lund, Sweden
  • Laboratory of Crystal Growth Physics, Przyokopowa 28, 01-208 Warszawa, Poland
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z530kz
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