Photovoltaic Effect with a Spectrally Dependent Sign in Type-II GaAlAs Heterostructure

• Authors: M. Jeżewski , R. Teissier , F. Mollot , R. Planel
• Languages of publication: EN

Abstracts

EN

An asymmetric n-i-n like-II GaAs/GaAlAs/AlAs quantum heterostructure was designed and fabricated in order to observe a static photovoltage with a spectrally dependent sign. This photovoltage is associated with a light induced spatial separation of electrons and holes within selected regions of the structure. The observed photovoltage spectrum is compared with luminescence and luminescence excitation results.

Keywords

EN

78.55.Cr; 72.40.+w; 72.20.Jv

Discipline

• 78.55.Cr: III-V semiconductors
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping
• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 833-836

Dates

published

1992-11

Contributors

author

M. Jeżewski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

R. Teissier

• Laboratoire de Microstructures et de Microelectronique, CNRS, 196, Av. H. Ravera, 92220 Bagneux, France

author

F. Mollot

• Laboratoire de Microstructures et de Microelectronique, CNRS, 196, Av. H. Ravera, 92220 Bagneux, France

author

R. Planel

• Laboratoire de Microstructures et de Microelectronique, CNRS, 196, Av. H. Ravera, 92220 Bagneux, France

Identifiers

DOI

10.12693/APhysPolA.82.833