Photovoltaic Effect with a Spectrally Dependent Sign in Type-II GaAlAs Heterostructure

• Authors: M. Jeżewski , R. Teissier , F. Mollot , R. Planel
• Languages of publication: EN

Abstracts

EN

An asymmetric n-i-n like-II GaAs/GaAlAs/AlAs quantum heterostructure was designed and fabricated in order to observe a static photovoltage with a spectrally dependent sign. This photovoltage is associated with a light induced spatial separation of electrons and holes within selected regions of the structure. The observed photovoltage spectrum is compared with luminescence and luminescence excitation results.

Keywords

EN

78.55.Cr   72.40.+w   72.20.Jv  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 833-836

Dates

published

1992-11

Identifiers

DOI

10.12693/APhysPolA.82.833