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Abstracts
An asymmetric n-i-n like-II GaAs/GaAlAs/AlAs quantum heterostructure was designed and fabricated in order to observe a static photovoltage with a spectrally dependent sign. This photovoltage is associated with a light induced spatial separation of electrons and holes within selected regions of the structure. The observed photovoltage spectrum is compared with luminescence and luminescence excitation results.
Discipline
Journal
Year
Volume
Issue
Pages
833-836
Physical description
Dates
published
1992-11
Contributors
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
- Laboratoire de Microstructures et de Microelectronique, CNRS, 196, Av. H. Ravera, 92220 Bagneux, France
author
- Laboratoire de Microstructures et de Microelectronique, CNRS, 196, Av. H. Ravera, 92220 Bagneux, France
author
- Laboratoire de Microstructures et de Microelectronique, CNRS, 196, Av. H. Ravera, 92220 Bagneux, France
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z528kz