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1992 | 82 | 5 | 833-836
Article title

Photovoltaic Effect with a Spectrally Dependent Sign in Type-II GaAlAs Heterostructure

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EN
Abstracts
EN
An asymmetric n-i-n like-II GaAs/GaAlAs/AlAs quantum heterostructure was designed and fabricated in order to observe a static photovoltage with a spectrally dependent sign. This photovoltage is associated with a light induced spatial separation of electrons and holes within selected regions of the structure. The observed photovoltage spectrum is compared with luminescence and luminescence excitation results.
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Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Laboratoire de Microstructures et de Microelectronique, CNRS, 196, Av. H. Ravera, 92220 Bagneux, France
author
  • Laboratoire de Microstructures et de Microelectronique, CNRS, 196, Av. H. Ravera, 92220 Bagneux, France
author
  • Laboratoire de Microstructures et de Microelectronique, CNRS, 196, Av. H. Ravera, 92220 Bagneux, France
References
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bwmeta1.element.bwnjournal-article-appv82z528kz
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