Defects Studies in As Grown and Neutron Irradiatcd Phosphorus Rich GaP

• Authors: J. Jasiński , M. Palczewska , K. Korona , M. Kamińska , E. Bourret , G. Elliot
• Languages of publication: EN

Abstracts

EN

Semi-insulating, p- and n-type liquid encapsulated Czochralski grown phosphorus rich GaP crystals before and alter neutron irradiation were studied. EPR measurements proved that the phosphorus antisite defect P_{Ga} introduced by neutron irradiation was exactly the same as in as grown materials, i.e. surrounded by four substitutional phosphorus atoms. In neutron irradiated crystals EPR showed also a signal, similar to the one found in plastically deformed GaAs and GaP. The concentrations of P_{Ga} and of the other defect were estimated to be of the same order of magnitude. Two absorption bands at 0.81 and 1.12 eV were found for irradiated materials. The temperature dependence of resistivity indicated hopping as the mechanism of conduction in samples irradiated with doses higher than 4 × 10^{16} cm^{-2}.

Keywords

EN

71.55.Eq; 78.50.Ge; 76.30.Mi

Discipline

• 71.55.Eq: III-V semiconductors
• 76.30.Mi: Color centers and other defects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 829-832

Dates

published

1992-11

Contributors

author

J. Jasiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Palczewska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

K. Korona

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Kamińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

E. Bourret

• Lawrence Berkeley Laboratory, Berkeley, CA 94720 USA

author

G. Elliot

• Hewlett Packard, San Jose, CA 95131 USA

Identifiers

DOI

10.12693/APhysPolA.82.829