PL EN


Preferences help
enabled [disable] Abstract
Number of results
1992 | 82 | 5 | 829-832
Article title

Defects Studies in As Grown and Neutron Irradiatcd Phosphorus Rich GaP

Content
Title variants
Languages of publication
EN
Abstracts
EN
Semi-insulating, p- and n-type liquid encapsulated Czochralski grown phosphorus rich GaP crystals before and alter neutron irradiation were studied. EPR measurements proved that the phosphorus antisite defect P_{Ga} introduced by neutron irradiation was exactly the same as in as grown materials, i.e. surrounded by four substitutional phosphorus atoms. In neutron irradiated crystals EPR showed also a signal, similar to the one found in plastically deformed GaAs and GaP. The concentrations of P_{Ga} and of the other defect were estimated to be of the same order of magnitude. Two absorption bands at 0.81 and 1.12 eV were found for irradiated materials. The temperature dependence of resistivity indicated hopping as the mechanism of conduction in samples irradiated with doses higher than 4 × 10^{16} cm^{-2}.
Keywords
EN
Year
Volume
82
Issue
5
Pages
829-832
Physical description
Dates
published
1992-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z527kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.