Optical and Electrical Measurements of Low-Temperature InAlAs

• Authors: K. Korona , A. Wysmołek , R. Bożek , M. Kamińska , J. Baranowski , E. Weber
• Languages of publication: EN

Abstracts

EN

Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In_{0.52}Al_{0.48}As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.

Keywords

EN

71.55.Eq; 73.60.Br; 78.55.Cr

Discipline

• 78.55.Cr: III-V semiconductors
• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 825-828

Dates

published

1992-11

Contributors

author

K. Korona

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

A. Wysmołek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

R. Bożek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Kamińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

J. Baranowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

E. Weber

• University of California, Berkeley, CA 94720, USA

Identifiers

DOI

10.12693/APhysPolA.82.825