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1992 | 82 | 5 | 825-828
Article title

Optical and Electrical Measurements of Low-Temperature InAlAs

Content
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Languages of publication
EN
Abstracts
EN
Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In_{0.52}Al_{0.48}As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
Keywords
EN
Year
Volume
82
Issue
5
Pages
825-828
Physical description
Dates
published
1992-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z526kz
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