Journal
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Abstracts
Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
Journal
Year
Volume
Issue
Pages
821-824
Physical description
Dates
published
1992-11
Contributors
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
- University of California, Berkeley, CA 94720, USA
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z525kz