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1992 | 82 | 5 | 821-824
Article title

Deep Defects in Low-Temperature GaAs

Content
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Languages of publication
EN
Abstracts
EN
Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
Keywords
EN
Publisher

Year
Volume
82
Issue
5
Pages
821-824
Physical description
Dates
published
1992-11
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • University of California, Berkeley, CA 94720, USA
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z525kz
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