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1992 | 82 | 5 | 813-816
Article title

Electric Field Enhanced Emission of Holes from the Double Donor Level of the EL2 Defect in GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
Strong electric-field enhancement of the thermal emission rate of holes from the doubly ionized charge state of the EL2 defect was revealed with the deep-level transient spectroscopy in p-type GaAs and analyzed in a model of phonon-assisted tunnel effect. Similar dependence observed for the electric field directions parallel to three main crystallographic axes suggests tetrahedral symmetry of the defect which is consistent with its identification as the arsenic antisite.
Keywords
EN
Year
Volume
82
Issue
5
Pages
813-816
Physical description
Dates
published
1992-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z523kz
Identifiers
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