Journal
Article title
Authors
Title variants
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Abstracts
The interface energy spectrum in real band-inverted PbTe/SnTe heterojunctions formed both in the (111) and (001) planes is calculated. It is shown that even if the valence band of SnTe lies above the conduction band minimum of PbTe, the interface, midgap states may still exist due to the strain effect on the band gaps.
Discipline
Journal
Year
Volume
Issue
Pages
805-808
Physical description
Dates
published
1992-11
Contributors
author
- Institute of Material Science Problems, Ukr. Acad. Sci., Krasnoarmeyskaya 60-63, 274029 Chernovtsy, Ukraine
author
- Institute of Physics, Technical University of Poznań, Piotrowo 3, 60-965 Poznań, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z521kz