Interface Energy Spectrum of Real PbTe/SnTe Heterojunction

• Authors: V. Litvinov , M. Oszwałdowski
• Languages of publication: EN

Abstracts

EN

The interface energy spectrum in real band-inverted PbTe/SnTe heterojunctions formed both in the (111) and (001) planes is calculated. It is shown that even if the valence band of SnTe lies above the conduction band minimum of PbTe, the interface, midgap states may still exist due to the strain effect on the band gaps.

Keywords

EN

73.40.Lq; 71.50.+t

Discipline

• 73.40.Lq: Other semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 805-808

Dates

published

1992-11

Contributors

author

V. Litvinov

• Institute of Material Science Problems, Ukr. Acad. Sci., Krasnoarmeyskaya 60-63, 274029 Chernovtsy, Ukraine

author

M. Oszwałdowski

• Institute of Physics, Technical University of Poznań, Piotrowo 3, 60-965 Poznań, Poland

Identifiers

DOI

10.12693/APhysPolA.82.805