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1992 | 82 | 5 | 797-800
Article title

Energy Spectrum in Quantum Dots of Lead and Tin Chalcogenides Semiconducting Compounds

Content
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Languages of publication
EN
Abstracts
EN
The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calculations of the energy levels as functions of the dot radius are performed. When the anisotropy of the bare energy spectrum is strong, the energy levels are calculated using Fal'kovskii's adiabatic approximation for multiband systems. When the quantum dot material has an inverted band gap with respect to the host, the low-energy states within the fundamental gap are shown to arise.
Keywords
EN
Publisher

Year
Volume
82
Issue
5
Pages
797-800
Physical description
Dates
published
1992-11
Contributors
author
  • Chernovtsy Department of the Institute of Materials Science Problems, Ukrainian Academy of Sciences, I. Wilde 5, 274001 Chernovtsy, Ukraine
author
  • Chernovtsy Department of the Institute of Materials Science Problems, Ukrainian Academy of Sciences, I. Wilde 5, 274001 Chernovtsy, Ukraine
author
  • Chernovtsy Department of the Institute of Materials Science Problems, Ukrainian Academy of Sciences, I. Wilde 5, 274001 Chernovtsy, Ukraine
author
  • Institute of Radiophysics and Electronics, Ukrainian Academy of Sciences, Acad. Proskura 12, 310085 Kharkov, Ukraine
  • Institute of Radiophysics and Electronics, Ukrainian Academy of Sciences, Acad. Proskura 12, 310085 Kharkov, Ukraine
  • Technical University of Poznań, Piotrowo 3, 60-965 Poznań, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z519kz
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