Electron Temperature in Semi-Insulating GaAs for Low Electric Fields

• Authors: A. Zduniak , J. Łusakowski , G. Nowak
• Languages of publication: EN

Abstracts

EN

Heating of electrons by electric fields smaller than that required for generation of domain oscillations was investigated in samples of EL2-rich semi-insulating GaAs. Current-voltage characteristics were measured as a function of temperature between 268 K and 330 K. They exhibit a sublinear shape which is interpreted as a result of an enhanced electron capture on the EL2. The capture rate and the electron temperature as a function of the electric field was determined. A fitting procedure gave the value of electron capture cross-section on the EL2 to be 2.7 × 10^{-13} cm^{2} which agrees with literature data.

Keywords

EN

72.20.Ht

Discipline

• 72.20.Ht: High-field and nonlinear effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 777-780

Dates

published

1992-11

Contributors

author

A. Zduniak

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

J. Łusakowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

G. Nowak

• Laboratory of Physics of Crystal Growth, Przyokopowa 28, 01-208 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.82.777