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1992 | 82 | 5 | 777-780
Article title

Electron Temperature in Semi-Insulating GaAs for Low Electric Fields

Content
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Languages of publication
EN
Abstracts
EN
Heating of electrons by electric fields smaller than that required for generation of domain oscillations was investigated in samples of EL2-rich semi-insulating GaAs. Current-voltage characteristics were measured as a function of temperature between 268 K and 330 K. They exhibit a sublinear shape which is interpreted as a result of an enhanced electron capture on the EL2. The capture rate and the electron temperature as a function of the electric field was determined. A fitting procedure gave the value of electron capture cross-section on the EL2 to be 2.7 × 10^{-13} cm^{2} which agrees with literature data.
Keywords
EN
Publisher

Year
Volume
82
Issue
5
Pages
777-780
Physical description
Dates
published
1992-11
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Laboratory of Physics of Crystal Growth, Przyokopowa 28, 01-208 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z514kz
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