On the High Compositional Uniformity of Thick GaAlAs Layers Grown by Liquid Phase Electroepitaxy

• Authors: Z. Żytkiewicz , S. Miotkowska
• Languages of publication: EN

Abstracts

EN

The results of electroepitaxial growth of thick GaAlAs layers on GaAs substrates are presented. It is experimentally proven that effective convective mixing of the solution volume results in the compositional uniformity of GaAlAs layers, even in spite of the high compositional non-uniformity of the material supplying the solutes (Al, As) to the solution during the growth of the layers. For the first time this allowed us to grow uniform GaAlAs layers with thicknesses up to 200-300 μm in a wide composition range from a small (5 g) amount of solution.

Keywords

EN

68.55.Df; 81.10.Dn

Discipline

• 81.10.Dn: Growth from solutions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 765-768

Dates

published

1992-11

Contributors

author

Z. Żytkiewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

S. Miotkowska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.82.765