Description of Electrical Characteristics of Semiconducting Compound-Insulator Interface on the Basis of the Model of Interface States Distributed in Energy and in Space

• Authors: S. Kochowski
• Languages of publication: EN

Abstracts

EN

The calculation results of the influence of interface state parameters on capacitance-voltage and conductance-voltage characteristics of n-GaAs metal insulator semiconductor structures are presented. The U-shaped distribution in the energy dimension and Gaussian-like distribution in the space dimension for insulator-semiconductor interface states are assumed.

Keywords

EN

72.80.Ey; 73.20.-r; 73.40.Qv

Discipline

• 73.20.-r: Electron states at surfaces and interfaces
• 72.80.Ey: III-V and II-VI semiconductors
• 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 5
• Pages: 761-764

Dates

published

1992-11

Contributors

author

S. Kochowski

• Institute of Physics, Technical University of Silesia, ul.Krzywoustego 2, 44-100 Gliwice, Poland

Identifiers

DOI

10.12693/APhysPolA.82.761