AlGaAs to GaAs Energy Transfer Mechanisms in AlGaAs/GaAs Structures

• Authors: K. Karpińska , M. Godlewski , Z. Żytkiewicz , W. Chen , E. Weber
• Languages of publication: EN

Abstracts

EN

The results of photoluminescence and optically detected cyclotron resonance experiments are presented for thick AlGaAs epilayers grown by liquid phase electroepitaxy method on GaAs:Cr substrate. These results indicate an efficient energy transfer from excited AlGaAs to GaAs.

Keywords

EN

72.20.Jv; 76.70.Hb; 78.55.Cr

Discipline

• 78.55.Cr: III-V semiconductors
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping
• 76.70.Hb: Optically detected magnetic resonance (ODMR)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 4
• Pages: 713-716

Dates

published

1992-10

Contributors

author

K. Karpińska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

Z. Żytkiewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

W. Chen

• Dept. of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720, USA

author

E. Weber

• Dept. of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720, USA

Identifiers

DOI

10.12693/APhysPolA.82.713