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Abstracts
Theory of shallow donor in III-V semiconductors in the presence of magnetic field is reinvestigated. Considerations are performed within the 3-level Kane model. In order to avoid singularities caused by the Coulomb potential we divide it into short- and long-range components. The latter one is the slowly varying potential and contrary to the Coulomb potential it satisfies all demands for envelope function equation. The short-range part is contributing to a chemical shift. Calculation of energies of two possible spin states of ground donor level are then performed using variational method.
Discipline
Journal
Year
Volume
Issue
Pages
693-696
Physical description
Dates
published
1992-10
Contributors
author
- Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
- Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv82z430kz