Ground Shallow Donor State of III-V Compounds for Arbitrary Magnetic Field

• Authors: A. Obuchowicz , J. Własak
• Languages of publication: EN

Abstracts

EN

Theory of shallow donor in III-V semiconductors in the presence of magnetic field is reinvestigated. Considerations are performed within the 3-level Kane model. In order to avoid singularities caused by the Coulomb potential we divide it into short- and long-range components. The latter one is the slowly varying potential and contrary to the Coulomb potential it satisfies all demands for envelope function equation. The short-range part is contributing to a chemical shift. Calculation of energies of two possible spin states of ground donor level are then performed using variational method.

Keywords

EN

78.20.Ls; 61.50.Em; 71.55.-i

Discipline

• 78.20.Ls: Magneto-optical effects(for magneto-optical devices, see 85.70.Sq)
• 71.55.-i: Impurity and defect levels

• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 4
• Pages: 693-696

Dates

published

1992-10

Contributors

author

A. Obuchowicz

• Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

J. Własak

• Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

Identifiers

DOI

10.12693/APhysPolA.82.693