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1992 | 82 | 4 | 685-688
Article title

On Trap Generation in SiO_{2} Films of Si MOSFETS by Hot Electrons

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Abstracts
EN
Trap generation in amorphous SiO_{2} films with thickness about 500 Å was studied by nonavalanche injection of hot electrons. The trap density, the electron capture cross-section of native and generated traps and the effective trap generation constant for the oxide fields of 1-4 MV/cm, injected charge density up to 3 × 10^{19} e/cm^{-2} and injected current density in the range 2-300 μA/cm^{2} were determined and discussed.
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Contributors
  • Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
author
  • Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
author
  • Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
  • Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
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bwmeta1.element.bwnjournal-article-appv82z428kz
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